roducts., line. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 MJH16008 description ? collector-emitter sustaining voltage- ) = 450v(min) applications ? designed for high-voltage .high-speed, power switching in inductive circuits where fall time is critical. they are partic- ularly suited for line operated switch-mode applications. typical applications: ? switching regulators ? inverters ? solenoid and relay drivers ? motor controls ? deflection circuits absolute maximum ratings(ta=25c) symbol vcev vceo(sus) vebo ic icm ib ibm pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak base current-continuous base current-peak collector power dissipation @tc=25c junction temperature storage temperature value 850 450 6 8 16 6 12 125 150 -65-150 unit v v v a a a a w ?c ?c thermal characteristics symbol rth j-c parameter max thermal resistance, junction to case 1 .0 unit ?c/w \ i 1 2 ; '< 3 pin 1.base 2. collector 3. emitter to-3pn package j \t uqi ,t?! i h t ( -*- / ? b ? ?-y-? dim a b c d b f g h j k l n q r s u ?- _? c ?*? i ' y:w i | ?j . . , . -? -*-j ? ?r mm min 19.90 15,50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1 90 10.89 4.90 3.35 1.995 5.90 y 9.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2 10 10.91 5.10 3.45 2.005 6.10 10.10 ''?-?*'/' . j , silicon npn power transistor MJH16008 electrical characteristics tc=25*c unless otherwise specified symbol vceo(sus) vce(sat)-i vce(sat)-2 vee(sat) icev icer iebo hfe cob parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain output capacitance conditions lc=100ma; ib=0 lo= 3a; ib= 0.3a lc= 5a; ib= 0.5a ic=5a; lb=0.5a,tc=100'c lc= 5a; ib= 0.5a lc=5a;lb=0.5a,tc=100'c vcev=850v;vbe(0ff)=1.5v vcev=850v;vbe(off)=1 .5v;tc=100"c vce= 850v; rbe= 50 ft ,tc= 100'c veb= 6v; lc=0 lc= 8a ; vce= 5v le=0;vcb=10v;f,est=1.0khz min 450 7 typ. max 2.5 3.0 3.0 1.5 1.5 0.25 1.5 2.5 1.0 350 unit v v v v ma ma ma pf switching times;resistive load td tr ts tf delay time rise time storage time fall time lc= 5a , vcc= 250v; rb2= 4 fi ; !_, ? a ca- r ? -1 a-pla/? ^fl it c- duty cycle^2.0% 20 100 900 70 50 250 2200 250 ns ns ns ns
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